SSF3092G1 ? silikron semiconductor co.,ltd. 20 15 . 01 . 23 preliminary version: 1. 0 page 1 of 6 www.silikron.com main product characteristics: v dss 30 v r ds (on) 92 mohm (typ . ) i d 1.4 a features and benefits : description : absolute max rating : symbol parameter max. units i d @ tc = 25 c continuous drain current, v gs @ 10v 1.4 a i d @ tc = 100 c continuous drain current, v gs @ 10v 1 i dm pulsed drain current 8.4 p d @tc = 25 c power dissipation 0.62 w v ds drain-source voltage 30 v v gs gate-to-source voltage 20 v t j t stg operating junction and storage temperature range -55 to + 150 c thermal resistance symbol characterizes typ. max. units r j a junction-to-ambient (t 10s) 200 /w marking and pin assignment schematic diagram ? advanced trench mosfet process technology ? special designed for pwm, load switching and general purpose applications ? u ltra low on-resistance with low gate charge ? f ast switching and reverse body recovery ? 150 operating temperature it utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. these features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications sot23
SSF3092G1 ? silikron semiconductor co.,ltd. 20 15 . 01 . 23 preliminary version: 1. 0 page 2 of 6 www.silikron.com electrical characterizes @t a =25 unless otherwise specified symbol parameter min. typ. max . units conditions v ( b r) dss drain-to-source breakdown voltage 30 v v gs = 0v, i d = 250 a r ds(on) static drain-to-source on-resistance 92 120 m v gs =10v, i d = 1.4 a r ds(on) static drain-to-source on-resistance 120 160 m v gs =4.5v, i d = 1.2 a v gs(th) gate threshold voltage 1 3 v v ds = v gs , i d = 250 a i dss drain-to-source leakage current 1 a v ds = 30 v,v gs = 0v 50 t j = 125 c i gss gate-to-source forward leakage 1 00 na v gs = 20 v - 1 00 v gs = - 20 v q g total gate charge 1.3 nc i d = 1.4 a , v ds = 15 v , v gs = 4.5 v q gs gate-to-source charge 0.5 q gd gate-to-drain("miller") charge 0.5 t d(on) turn-on delay time 3 ns v gs =10v, v ds = 15 v, r gen = 6 r l = 15 t r rise time 5 t d(off) turn-off delay time 20 t f fall time 2 c iss input capacitance 135 pf v gs = 0v , v ds = 15 v , ? = 1m hz c oss output capacitance 30 c rss reverse transfer capacitance 20 source-drain ratings and characteristics symbol parameter min. typ. max . units conditions i s continuous source current (body diode) 1.4 a mosfet symbol showing the integral reverse p-n junction diode. i sm pulsed source current ( body diode ) 8.4 a v sd diode forward voltage 0.72 1.2 v i s = 1 a, v gs =0v
SSF3092G1 ? silikron semiconductor co.,ltd. 20 15 . 01 . 23 preliminary version: 1. 0 page 3 of 6 www.silikron.com test circuits and waveforms switch waveforms: notes: calculated continuous current based on maximum allowable junction temperature. repetitive rating; pulse width limited by max junction temperature. the value of r j a is measured with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with ta =25 c these curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) = 150 c.
SSF3092G1 ? silikron semiconductor co.,ltd. 20 15 . 01 . 23 preliminary version: 1. 0 page 4 of 6 www.silikron.com mechanical data
SSF3092G1 ? silikron semiconductor co.,ltd. 20 15 . 01 . 23 preliminary version: 1. 0 page 5 of 6 www.silikron.com ordering and marking information device marking: 3092 package (available) sot-23 operating temperature range c : -55 to 150 o c devices per unit package type units/ tube tubes/inner box units/inner box inner boxes/carton box units/carton box sot23 3000 10 30000 4 120000 reliability test program test item conditions duration sample size high temperature reverse bias(htrb) tj= 15 0 @ 80% of max v dss /v ces /v r 168 hours 500 hours 1000 hours 3 lots x 77 devices high temperature gate bias(htgb) tj=150 @ 100% of max v gss 168 hours 500 hours 1000 hours 3 lots x 77 devices
SSF3092G1 ? silikron semiconductor co.,ltd. 20 15 . 01 . 23 preliminary version: 1. 0 page 6 of 6 www.silikron.com attention: any and all silikron products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your silikron representative nearest you before using any silikron products described or contained herein in such applications. silikron assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all silikron products described or contained herein. specifications of any and all silikron products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer s products or equipment. silikron semiconductor co.,ltd. strives to supply high-quality high-reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all silikron products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of silikron semiconductor co.,ltd. information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. silikron believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the silikron product that you intend to use. customer service worldwide sales and service: sales@silikron.com technical support : technical@silikron.com suzhou silikron semiconductor corp. 11a, 4 2 8 xinglong street, suzhou industrial park, p.r.china tel: (86-512) 62560688 fax: (86-512) 65160705 e-mail: sales@silikron.com
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